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| SMD Type Silicon NPN Epitaxial 2SC4118 Transistors IC Features Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 5 500 50 100 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE Testconditons VCB = 35 V, IE = 0 VEB = 5 V, IC = 0 VCE = 1 V, IC = 100 mA VCE = 6 V, IC = 400 mA VCE (sat) IC = 100 mA, IB = 10 mA VBE fT Cob VCE = 1 V, IC = 100 mA VCE = 6 V, IC = 20 mA VCB = 6 V, IE = 0, f = 1 MHz 70 25 0.1 0.8 300 7 0.25 1.0 V V MHz pF Min Typ Max 0.1 0.1 240 Unit iA iA hFE Classification Marking hFE WO 70 140 WY 120 240 www.kexin.com.cn 1 |
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